Volkan Kursun

 

Nanoelectronic Circuits and

Gigascale Systems Laboratory

 

Patents

 

Citations to my papers and patents: follow this link

 

1. V. Kursun and Z. Liu, “Domino Logic Circuit Techniques for Suppressing Subthreshold and Gate Oxide Leakage,” United States Patent, No. 7,855,578 B2, December 21, 2010. Licensed by Intel Corporation.

2. V. Kursun and Z. Liu, “Low Swing Domino Logic Circuits with Multiple Supply and Ground Voltages,” United States Patent, No. 7,764,087 B2, July 27, 2010. Licensed by Intel Corporation.

3. V. Kursun and E. G. Friedman, "Domino Logic with Variable Threshold Voltage Keeper," United States Patent, No. 7,388,399 B1, June 17, 2008.

4. V. Kursun and E. G. Friedman, “Domino Logic with Variable Threshold Voltage Keeper,” United States Patent, No. 7,218,151, May 15, 2007.

5. D. S. Gardner, V. Kursun, and S. Narendra, “Fully Integrated DC-to-DC Regulator Utilizing On-Chip Inductors with High Frequency Magnetic Materials,” United States Patent, No. 7,202,648, April 10, 2007.

6. V. Kursun and E. G. Friedman, “Dual Threshold Voltage and Low Swing Domino Logic Circuits,” United States Patent, No. 6,900,666, May 31, 2005.

7. P. Hazucha, G. Schrom, T. Karnik, V. Kursun, and S. G. Narendra, “Voltage Converter Utilizing Independently Switched Inductors,” United States Patent, No. 6,838,863, January 4, 2005.

8. V. Kursun, H. Zhu, and H. Jiao, “Multi-threshold Voltage SRAM Cells with Suppressed Leakage Currents and Enhanced Data Stability,” Chinese (P.R.C.) Patent Pending.

9. V. Kursun, H. Jiao, and S. M. Salahuddin, “SRAM Cells with Asymmetrical Access Transistors for Enhanced Read Data Stability and Write Ability,” Chinese (P.R.C.) Patent Pending.